Magnetic tunnel junction comprising an inhomogeneous granular free layer and associated spintronic devices
AssigneesCommissariat A L'energie Atomique Et Aux Energies Alternatives, Centre National de la Recherche Scientifique (CNRS), Institut Polytechnique De Grenoble
InventorsBernard Dieny, Marco Mansueto, Ricardo Sousa, Ioan-Lucian Prejbeanu, Liliana Buda-Prejbeanu
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Abstract
A magnetic tunnel junction includes at least one free layer, at least one reference layer, and at least one tunnel barrier separating the free layer and the reference layer, wherein the free layer is an inhomogeneous granular layer including at least two grains, each grain of the at least two grains being sensibly magnetically decoupled from the other adjacent grains of the at least two grains.
Claims10
A multivalued non-volatile memory element comprising a magnetic tunnel junction, the magnetic tunnel junction comprising at least one free layer configured to provide a tunnel magnetoresistance signal, at least one reference layer, and at least one tunnel barrier separating the free layer and the reference layer, wherein the free layer configured to provide a tunnel magnetoresistance signal is an inhomogeneous granular layer comprising at least two grains, each grain of the at least two grains being sensibly magnetically decoupled from the other adjacent grains of the at least two grains when an intergrain coupling energy integrated over a lateral area of said grain does not exceed half of an effective anisotropy energy of said grain integrated on its volume, wherein the multivalued non-volatile memory element is a magnetic random-access memory element of the spin-orbit torque type or SOT-MRAM (Magnetic Random-Access Memory), wherein the inhomogeneous granular free layer is at least a bilayer comprising a ferromagnetic layer and an antiferromagnetic layer.
Dependencies are inferred from the claim text.