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US 12,099,314 B2Granted
Image forming apparatus member, transfer device, and image forming apparatus
AssigneeFUJIFILM Business Innovation Corp.
InventorsShogo Hayashi, Hiroaki Tanaka, Satoya Sugiura
Life of this patent
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Abstract
An image forming apparatus member includes a surface layer containing a Si-atom containing polymer as a major component. The dispersive component of the surface free energy of the surface layer is 25 mN/m or less, the dipole component of the surface free energy of the surface layer is 5 mN/m or less, and the hydrogen bonding component of the surface free energy of the surface layer is 5 mN/m or less.
Claims20
An image forming apparatus member comprising:
- a surface layer containing a Si-atom containing polymer as a major component,
- wherein a dispersive component of a surface free energy of the surface layer is 25 mN/m or less, a dipole component of the surface free energy of the surface layer is 5 mN/m or less, and a hydrogen bonding component of the surface free energy of the surface layer is 5 mN/m or less, and
- wherein a main chain backbone of the Si-atom containing polymer is a backbone having a cyclic hydrocarbon structure.
An image forming apparatus member comprising:
- a surface layer containing a Si-atom containing polymer as a major component,
- wherein a dispersive component of a surface free energy of the surface layer is 25 mN/m or less, a dipole component of the surface free energy of the surface layer is 5 mN/m or less, and a hydrogen bonding component of the surface free energy of the surface layer is 5 mN/m or less, and
- wherein the Si-atom containing polymer has a trialkylsiloxy group.
An image forming apparatus member comprising:
- a surface layer containing a Si-atom containing polymer as a major component,
- wherein a dispersive component of a surface free energy of the surface layer is 25 mN/m or less, a dipole component of the surface free energy of the surface layer is 5 mN/m or less, and a hydrogen bonding component of the surface free energy of the surface layer is 5 mN/m or less, and
- wherein a proportion of Si atoms present in a surface of the surface layer as measured by X-ray photoelectron spectroscopy is 10 atom % or more and 50 atom % or less.
Dependencies are inferred from the claim text.