Nanovesicle comprising heterodimeric G-protein coupled receptor, method for preparing nanovesicle, field effect transistor-based taste sensor comprising nanovesicle, and method for manufacturing taste sensor

A field effect transistor-based sweet taste sensor comprising:

• a substrate;
• source and drain electrodes formed on the substrate, wherein the source and drain electrodes are spaced from each other;
• a nanostructure formed on the substrate between the source and drain electrodes, wherein the nanostructure electrically contacts the source and drain electrodes;
• and
• a nanovesicle comprising an interior volume enclosed by a lipid bilayer and including a heterodimeric G protein coupled receptor at a surface of and/or within the lipid bilayer, the heterodimeric G protein coupled receptor comprising hTAS1R2 and/or hTAS1R3;
• wherein the nanovesicle is immobilized onto a surface of the nanostructure, wherein the field effect transistor-based sweet taste sensor is configured to measure a conductance variation resulting from positive ions flow into the interior volume of the nanovesicle via a cAMP pathway via binding between the heterodimeric G protein coupled receptor and a sweet taste substance.