Methods for forming large area single crystal diamond substrates with high crystallographic alignment

A method for forming a large area single crystal diamond

• (SCD) surface, the method comprising:
• (a) providing a first SCD substrate having a growth surface;
• (b) providing a second SCD substrate having a growth surface, wherein
• (i) the second SCD substrate is spaced apart from and crystallographically aligned within 1° with the first SCD substrate, and
• (ii) the first SCD substrate and the second SCD substrate are spaced apart by a first distance of 0.5 mm to 5 mm;
• (c) depositing a first SCD layer on the first SCD growth surface and a second SCD layer on the second SCD growth surface for a first time period, the layers extending both vertically and laterally relative to their respective growth surfaces;
• (d) pausing deposition of the first SCD layer and the second SCD layer after the first time period, and then polishing (i) the first SCD layer to form a first polished SCD layer (ii) the second SCD layer to form a second polished SCD layer;
• and
• (e) continuing deposition of the first SCD layer on the first polished SCD layer and the second SCD layer on the second polished SCD layer for a second time period at least until they join together to form a composite SCD layer, wherein upper adjacent edges of the first polished SCD layer and the second polished SCD layer are within 100 μm;
• wherein providing the first SCD substrate and providing the second SCD substrate comprises:
• providing a diamond substrate holder comprising (i) a first recess sized and shaped to receive the first SCD substrate and (ii) a second recess sized and shaped to receive the second SCD substrate, wherein the first recess and the second recess are spaced apart and positioned relative to each other such that the first SCD substrate and the second SCD substrate are crystallographically aligned when placed in their respective recesses;
• and
• placing the first SCD substrate in the first recess such that the first SCD substrate growth surface is at or above a surrounding top surface of the diamond substrate holder;
• and
• placing the second SCD substrate in the second recess such that the second SCD substrate growth surface is at or above a surrounding top surface of the diamond substrate holder.