Build-up film with low dielectric loss, preparation method therefor and circuit substrate structure
AssigneeWuhan Choice Technology Co,Ltd
InventorsDe Wu, Yi Wang, Shuhang Liao, Junxing Su
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AssigneeWuhan Choice Technology Co,Ltd
InventorsDe Wu, Yi Wang, Shuhang Liao, Junxing Su
Estimating the term…
A build-up film with low dielectric loss, a preparation method therefor, and a circuit substrate structure are provided. The build-up film is prepared from raw materials including 5-10 parts by mass of monofunctional benzoxazine having indene oligomer, 40-65 parts by mass of polymerized aromatic-based maleimide, 30-50 parts by mass of allyl benzoxazine, 0.1-3 parts by mass of initiator, 250-400 parts by mass of inorganic filler, and 0.1-5 parts by mass of silane coupling agent. The build-up film has low dielectric loss and high tensile strength. Low dielectric loss enables it to be applied in the field of 5G. For example, the build-up film can be used to packaging integrated circuit substrates, which is conducive to minimizing the transmission loss.
A build-up film with low dielectric loss, which is prepared from raw materials comprising 5-10 parts by mass of monofunctional benzoxazine having indene oligomer, 40-65 parts by mass of polymerized aromatic-based maleimide, 30-50 parts by mass of allyl benzoxazine, 0.1-3 parts by mass of initiator, 250-400 parts by mass of inorganic filler, and 0.1-5 parts by mass of silane coupling agent;
Dependencies are inferred from the claim text.