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US 12,098,071 B2Granted
Barrier film
AssigneeLG Chem, Ltd.
InventorsSung Jin Shin, Jang Yeon Hwang, Hee Joon Jeong, Bo Ra Park, Hee Wang Yang
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Abstract
Provided is a barrier film, comprising: a base layer; and an inorganic layer including Si, N, and O, wherein the inorganic layer has a thickness of 600 nm or less, and the film has a water vapor transmission rate of 0.5×10−3 g/m2·day as measured under conditions of a temperature of 38° C. and 100% relative humidity. The barrier film has excellent barrier properties and optical properties and can be used for electronic products sensitive to moisture.
Claims11
A barrier film, comprising:
- a base layer;
- and
- an inorganic layer including Si, N, and O,
- wherein the inorganic layer has a thickness of 600 nm or less, and the film has a water vapor transmission rate of 0.5×10−3 g/m2·day or less as measured under conditions of a temperature of 38° C. and 100% relative humidity, and
- wherein the inorganic layer has a compactness expressed through an etching rate of 0.17 nm/s or less in the thickness direction for an Ar ion etching condition to etch Ta2O5 at a rate of 0.09 nm/s, and
- wherein the second region satisfies the relationship:
- Si content>N content>O content.
4 more elements
Dependencies are inferred from the claim text.