MEMS resonator with colocated temperature sensor
OwnerCharles I. Grosjean, Ginel C. Hill +4inventors
InventorsCharles I. Grosjean, Ginel C. Hill, Paul M. Hagelin, Renata Melamud Berger, Aaron Partridge, Markus Lutz
Life of this patent
Estimating the term…
Abstract
A microelectromechanical system (MEMS) resonator includes a substrate having a substantially planar surface and a resonant member having sidewalls disposed in a nominally perpendicular orientation with respect to the planar surface. Impurity dopant is introduced via the sidewalls of the resonant member such that a non-uniform dopant concentration profile is established along axis extending between the sidewalls parallel to the substrate surface and exhibits a relative minimum concentration in a middle region of the axis.
Claims18
A semiconductor device comprising:
- a substrate;
- a microelectromechanical system (MEMS) resonator having one or more layers fabricated from the substrate, wherein at least one layer of the one or more layers has a dopant concentration greater than or equal to 1019/cm3;
- a temperature sensing device fabricated to include at least one of the one or more layers having the dopant concentration greater than or equal to 1019/cm3 circuitry to output a signal dependent on a resonance frequency of the MEMS resonator and a temperature sensed by the temperature sensing device;
- wherein the at least one layer of the one or more layers is formed according to a drive-in doping process, such that the MEMS resonator comprises a first region having a first dopant concentration greater than or equal to 1019/cm3 and a second region having a second dopant concentration greater than or equal to 1019/cm3, the second dopant concentration being at least ten times greater than the first dopant concentration.
A method of manufacturing a semiconductor device comprising:
- fabricating one or more layers of a microelectromechanical system (MEMS) device from a substrate, such that the one or more layers have a dopant concentration greater than or equal to 1019/cm3;
- fabricating a temperature sensing device to include at least one of the one or more layers having the dopant concentration greater than or equal to 1019/cm3;
- and
- providing circuitry to output a signal dependent on a resonance frequency of the MEMS resonator and a temperature sensed by the temperature sensing device;
- wherein the method further comprises using a drive-in doping process to form the at least one layer of the one or more layers, in a manner such that the MEMS resonator comprises a first region having a first dopant concentration greater than or equal to 1019/cm3 and a second region having a second dopant concentration greater than or equal to 1019/cm3, the second dopant concentration being at least ten times greater than the first dopant concentration.
Dependencies are inferred from the claim text.