P-type CZT radiation detector for high flux applications

An ionizing radiation detector, comprising:

• a p-type semiconductor single crystal substrate comprising first and second major planar opposing surfaces, wherein the p-type semiconductor single crystal substrate is doped with n-type dopant atoms, and wherein a concentration of deep level acceptor defects is greater than a concentration of the n-type dopant atoms in the p-type semiconductor single crystal substrate;
• a cathode electrode on the first major planar opposing surface of the p-type semiconductor single crystal substrate;
• and
• a plurality of anode electrodes on the second major planar opposing surface of the p-type semiconductor single crystal substrate,
• wherein:
• the p-type semiconductor single crystal substrate is doped with the n-type dopant atoms at a concentration between 0.1 parts per million (ppm) and 20 parts per million (ppm);
• the p-type semiconductor single crystal substrate comprises a II-VI semiconductor material;
• the II-VI semiconductor material comprises cadmium zinc telluride (CZT) comprising 6-14 at. % of zinc;
• the n-type dopant atoms comprise indium atoms, and resistivity of the p-type semiconductor single crystal substrate ranges from 5×108 to 5×1010 Ohm-cm;
• the concentration of deep level acceptor defects in the p-type semiconductor single crystal substrate is greater than a concentration of extrinsic and intrinsic donor defects in the p-type semiconductor single crystal substrate;
• the deep level acceptor defects comprise at least one of single ionized cadmium vacancies (VCd−), double ionized cadmium vacancies (VCd−−) or indium associate cadmium complexes (VCd−−—InCd+);
• the extrinsic donor defects comprise the n-type dopant atoms;
• and
• the intrinsic donor defects comprise at least one of single or double ionized tellurium anti-site defects (TeCd+, TeCd++), tellurium interstitial defects (Tei+), single or double ionized cadmium interstitial defects (Cdi+, Cdi++), or single or double ionized tellurium vacancy defects (VTe+, VTe++).