Semiconductor device
AssigneeJapan Display Inc.
InventorsTatsuya Toda, Masashi Tsubuku, Toshinari Sasaki
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Abstract
A semiconductor device includes an oxide semiconductor layer including indium, a gate electrode facing the oxide semiconductor layer, a gate insulating layer between the oxide semiconductor layer and the gate electrode, and a first electrode arranged above the oxide semiconductor layer and being in contact with the oxide semiconductor layer from above the oxide semiconductor layer. The indium is unevenly distributed in an unevenly distributed region among the oxide semiconductor layer. The unevenly distributed region overlaps with the first conductive layer in a planar view.
Claims8
A semiconductor device comprising:
- an oxide semiconductor layer including indium;
- a gate electrode facing the oxide semiconductor layer;
- a gate insulating layer between the oxide semiconductor layer and the gate electrode;
- and
- a first electrode arranged above the oxide semiconductor layer and being in contact with the oxide semiconductor layer from above the oxide semiconductor layer,
- wherein indium is unevenly distributed in an unevenly distributed region among the oxide semiconductor layer,
- the unevenly distributed region overlapping with a first conductive layer in a planar view,
- a part of the oxide semiconductor layer overlapping with the first electrode in a planar view includes a first region arranged in a side of the first electrode and a second region arranged in a side closer to the gate electrode than the first region, and
- a crystal particle size of indium unevenly distributed in the second region is larger than a crystal particle size of indium unevenly distributed in the first region.
A semiconductor device comprising:
- an oxide semiconductor layer including indium;
- a gate electrode facing the oxide semiconductor layer;
- a gate insulating layer between the oxide semiconductor layer and the gate electrode;
- and
- a first electrode arranged above the oxide semiconductor layer and being in contact with the oxide semiconductor layer from above the oxide semiconductor layer,
- wherein indium is unevenly distributed in an unevenly distributed region among the oxide semiconductor layer,
- the unevenly distributed region overlapping with a first conductive layer in a planar view,
- a part of the oxide semiconductor layer overlapping with the first electrode in a planar view includes a first region arranged in a side of the first electrode and a second region arranged in a side closer to the gate electrode than the first region,
- a size of a region in which a signal intensity due to indium in the second region is relatively larger than a size of a region in which a signal intensity due to indium in the first region, and
- the signal intensities are measured by a mapping analysis of Energy Dispersive X-ray spectrometry.
Dependencies are inferred from the claim text.