Cap layer able to be reactive ion etched for RSB DFL read elements
AssigneeWestern Digital Technologies, Inc.
InventorsHoward Gordon Zolla, Rong Cao
Life of this patent
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AssigneeWestern Digital Technologies, Inc.
InventorsHoward Gordon Zolla, Rong Cao
Estimating the term…
The present disclosure generally relates to a dual free layer (DFL) read head. In one embodiment, a dual free layer (DFL) read head, comprising: a tunnel magneto resistance (TMR) sensor disposed at a media facing surface (MFS); soft bias (SB) side shields disposed adjacent to the TMR sensor at the MFS; and a rear soft bias (RSB) disposed adjacent to the TMR sensor recessed from the MFS. The RSB has a nonmagnetic cap, the nonmagnetic cap comprising: a first nonmagnetic cap layer; and a second nonmagnetic cap layer, wherein an etch selectivity of the first nonmagnetic cap layer to the second nonmagnetic cap layer is a ratio of a:b in a first chemistry and a ratio of x:y in a second chemistry, wherein a is greater than b, and y is greater than x, and the second nonmagnetic cap layer is disposed on the first nonmagnetic cap layer.
A dual free layer (DFL) read head, comprising:
A dual free layer (DFL) read head, comprising:
A dual free layer (DFL) read head, comprising:
Dependencies are inferred from the claim text.