US 12,092,666 B1Granted

Method of current monitoring with temperature compensation

AssigneeInnovision Semiconductor Inc.

InventorHaiyin Li

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Abstract

A power stage, comprising of multiple power MOSFETs and control and monitoring circuits, is an important part of voltage regulators. The voltage regulator controller typically monitors the power stage output current to implement control and protection functions. Traditional power stages mostly adapt monolithic solutions, suffering from performance inefficiencies due to the LDMOS process, while co-packaged solutions with combined VDMOS and LDMOS processes suffer from potential large current monitoring errors due to different operating temperatures. The current invention proposes a current monitoring circuit with temperature compensation to cancel the temperature coefficient mismatch between the external power MOSFET and the current monitoring circuit. Therefore, the gain of the current monitoring circuit doesn't change with the temperature, allowing for high current monitoring precision, and the temperature compensation circuit doesn't affect the bandwidth of the current monitoring circuit, allowing the use of the output current monitoring signal for close-loop control and over-current protection.

A power stage integrated chip, comprising:

a PWM pin, a PVIN pin, a VDD pin, an AGND pin, a PGND pin, an SW pin, and an IMON pin;
two dies made of power MOSETs, fabricated using a VDMOS process;
a third die containing control, logic, and analog circuits, fabricated using a LDMOS process, wherein the third die further comprises a current monitoring circuit to output a current source signal at the IMON pin based on the output current at the SW pin, wherein the current monitoring circuit further comprises:
a first operational amplifier;
a current source circuit and a resistor in series to generate a voltage reference to the positive input of the first operational amplifier;
a second resistor with two terminals:
a first terminal is connected to two switches, each of which connects to the SW pin and the AGND pin respectively, and a second terminal is connected to the negative input of the first operational amplifier;
a first P-MOSFET with its gate connected to the output of the first operational amplifier, its source connected to the VDD pin and its drain connected to the negative input of the first operational amplifier;
a second operational amplifier;
a second P-MOSFET with its gate connected to the output of the first operational amplifier, its source connected to the VDD pin, and its drain is connected to the positive input of the second operational amplifier;
a third resistor that connects between the positive input of the second operational amplifier and the AGND pin;
a fourth resistor that connects between the negative input of the second operational amplifier and the AGND pin;
a current mirror circuit implemented by two P-MOSFETs;
an N-MOSFET with its gate is connected to the output of the second operational amplifier, its source connected to the negative input of the second operational amplifier, and its drain is connected to the input of the current mirror circuit;
a second current source circuit that connects between the output of the current mirror circuit and the AGND pin;
and
an IMON terminal at the current mirror circuit's output;
and
bonding wires or other necessary conductors to interconnect among the three dies.

16 more elements

Facts

Application

18/120,383Filed 11 Mar 2023

Published

US 2024/0302415 A112 Sep 2024

Granted

17 Sep 2024

Term ends

Not estimatedThe source records don’t support an estimate.

Classification9 codes

G01R 19/32
Arrangements for measuring currents or voltages or for indicating presence or sign thereof: compensating for temperature change
G01R 19/0092
Arrangements for measuring currents or voltages or for indicating presence or sign thereof: measuring current only
H03K 17/145
Modifications for compensating variations of physical values, e.g. of temperature: in field-effect transistor switches
H10D 30/659
Lateral dmos [ldmos] fets: having voltage-sensing or current-sensing structures, e.g. emulator sections or overcurrent sensing cells

Abstract

Claims1