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US 12,091,743 B2Granted
Sputtering target, manufacturing method therefor, and manufacturing method for magnetic recording medium
AssigneeJX Advanced Metals Corporation
InventorYasuyuki Iwabuchi
Life of this patent
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Abstract
A sputtering target containing silicon nitride (Si3N4) with reduced specific resistance of is provided. A sputtering target including Si3N4, SiC, MgO and TiCN, wherein a specific resistance of the sputtering target is 10 mΩ·cm or less.
Claims13
A sputtering target, comprising Si3N4, SiC, MgO and TiCN, wherein a specific resistance of the sputtering target is 10 mΩ·cm or less and a diffraction peak representing the crystal phase of TiCN at the incident angle (2θ) of 41.8° to 42.8° shows the maximum intensity among diffraction peaks present at an incident angle (2θ) of 20° to 80° in X-ray diffraction.
Dependencies are inferred from the claim text.