Epitaxial wafer, method of manufacturing the epitaxial wafer, diode, and current rectifier
AssigneeSouth China Normal University
InventorRichard Notzel
Life of this patent
Estimating the term…
Abstract
An epitaxial wafer, a method of manufacturing the epitaxial wafer, a diode, and a current rectifier are provided. The epitaxial wafer comprises a Si substrate layer; an insulating layer formed on the Si substrate layer; and a nitride semiconductor layer formed on a surface of the insulating layer facing away from the Si substrate layer; wherein the insulating layer has a thickness configured such that under a forward bias voltage, the insulating layer may allow electrons and holes to pass from one side to the other side of the insulating layer via quantum tunneling so as to allow a forward current flow.
Claims17
An epitaxial wafer comprising:
- a Si substrate layer;
- an insulating layer formed on the Si substrate layer;
- and
- a nitride semiconductor layer formed on a surface of the insulating layer facing away from the Si substrate layer,
- wherein the insulating layer is configured to have a thickness allowing free electrons to pass through the insulating layer via quantum tunneling,
- wherein the nitride semiconductor layer is an InGaN layer made by mixing GaN with InN,
- wherein an In content in the InGaN layer is between 30% and 80%,
- wherein a conduction band of the InGaN layer is aligned with a valence band of the Si substrate layer.
Dependencies are inferred from the claim text.