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US 12,087,577 B2Granted
Method for dividing a bar of one or more devices
AssigneeThe Regents of the University of California
InventorsTakeshi Kamikawa, Srinivas Gandrothula
Life of this patent
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Abstract
A method for dividing a bar of one or more devices. The bar is comprised of island-like III-nitride-based semiconductor layers grown on a substrate using a growth restrict mask; the island-like III-nitride-based semiconductor layers are removed from the substrate using an Epitaxial Lateral Overgrowth (ELO) method; and then the bar is divided into the one or more devices using a cleaving method.
Claims22
A method of manufacturing a device, comprising:
- preparing a bar comprising one or more III-nitride based semiconductor layers having a layer bending region on or above a substrate;
- forming one or more dividing support regions at least in part of the layer bending region along the bar;
- removing the bar from the substrate after forming the one or more dividing support regions;
- and
- dividing the bar into one or more devices by cleaving at the dividing support regions formed along the bar after removing the bar from the substrate.
2 more elements
A method of manufacturing a device, comprising:
- preparing a bar comprised of a plurality of island-like III-nitride-based semiconductor layers on or above a substrate;
- forming one or more dividing support regions at least in part of a layer bending region along the bar;
- and
- removing the bar from the substrate and dividing the bar by cleaving into one or more devices at the dividing support regions.
1 more element
A method of manufacturing a device, comprising:
- preparing a bar comprised of island-like III-nitride-based semiconductor layers grown on or above a substrate using a growth restrict mask;
- dividing the bar into one or more devices at one or more dividing support regions formed at least in part of a layer bending region of the island-like III-nitride-based semiconductor layers;
- and
- removing the island-like III-nitride-based semiconductor layers of the devices from the substrate.
1 more element
A method of manufacturing a device, comprising:
- growing one or more III-nitride-based semiconductor layers on or above a substrate using an epitaxial lateral overgrowth (ELO) technique, wherein the III-nitride-based semiconductor layers form one or more bars that are separated from each other on the substrate;
- removing the bars from the substrate without substantially including any of the substrate;
- and cleaving the removed bars to form one or more devices at one or more dividing support regions formed at least in part of a layer bending region of the III-nitride-based semiconductor layers wherein the one or more dividing support regions are formed along the bars before the bars are removed from the substrate.
Dependencies are inferred from the claim text.