Semiconductor device and methods of formation

A method, comprising:

• forming a cladding layer on a top surface of a substrate;
• forming a waveguide layer on a top surface of the cladding layer;
• and
• forming an optical attenuator structure directly on surfaces of opposing sidewalls of a waveguide structure that corresponds to a portion of the waveguide layer,
• wherein forming the optical attenuator structure comprises:
• forming an optical attenuator layer on a top surface of the waveguide layer, and
• removing portions of the optical attenuator layer,
• wherein an optical attenuator material is removed from a sidewall, of the waveguide structure, other than the opposing sidewalls to form the optical attenuator structure.

A photonics structure, comprising:

• a substrate;
• a cladding layer on a top surface of the substrate;
• a waveguide layer on a top surface of the cladding layer;
• and
• an optical attenuator structure, including a Gaussian doping profile, on one or more surfaces of a waveguide structure that corresponds to a portion of the waveguide layer,
• wherein the optical attenuator structure including the Gaussian doping profile comprises:
• a first dose of a dopant at a first depth;
• and
• a second dose of the dopant at a second depth,
• wherein the second dose is greater relative to the first dose.