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US 12,083,624 B2Granted
Method of printing laser mark and method of producing laser-marked silicon wafer
AssigneeSumco Corporation
InventorYoichiro Hirakawa
Life of this patent
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Abstract
Provided is a laser mark printing method and a method of producing a laser-marked silicon wafer that can reduce the machining strain left around dots constituting a laser mark. In a method of printing a laser mark having a plurality of dots on a silicon wafer, the plurality of dots is formed using laser light having a wavelength in the ultraviolet region.
Claims4
A method of producing a laser-marked silicon wafer, comprising:
- printing a laser mark having a plurality of dots on a silicon wafer that is obtained by slicing a single crystal silicon ingot grown by a predetermined method and is subjected to beveling;
- performing etching on at least a laser-mark printed region of the silicon wafer;
- and
- performing polishing on both surfaces of the silicon wafer having been subjected to the etching, wherein
- each of the plurality of dots is formed by using a laser light having a wavelength in an ultraviolet region,
- each of the plurality of dots is formed by performing an irradiation with the laser light a plurality of times,
- a number of pulses in each of the plurality of times of the irradiation with the laser light is 15,000 or more per second, and
- an amount removed by etching is 0.5 μm or more and 1.5 μm or less per side.
5 more elements
Dependencies are inferred from the claim text.