US 12,081,192 B2 · Methods and devices for microelectromechanical resonators

Abstract

A MEMS device may include: (i) a lower cavity, including a first island, formed within a first layer of the MEMS device; (ii) an upper cavity, including a second island, formed within a second layer of the MEMS device; (iii) a MEMS resonating element arranged in a device layer of the MEMS device and anchored via the first and second islands; (iv) a first set of electrodes for electrostatic actuation and sensing of the MEMS resonating element in an in-plane mode that is arranged in the device layer of the MEMS device; and (v) a second set of electrodes for electrostatic actuation and sensing of the MEMS resonating element in an out-of-plane mode that is electrically isolated from the first set of electrodes and located in the first or second layer of the MEMS device, and wherein the out-of-plane mode is a torsional mode or a saddle mode.

Claims28

Dependent claims

A MEMS device comprising:

a lower cavity formed within a first layer of the MEMS device, wherein the lower cavity includes a first island;
an upper cavity formed within a second layer of the MEMS device, wherein the upper cavity includes a second island;
a MEMS resonating element arranged in a device layer of the MEMS device and anchored via the first island and the second island;
a first set of electrodes for electrostatic actuation and sensing of the MEMS resonating element in an in-plane mode, wherein the first set of electrodes is arranged in the device layer of the MEMS device;
and
a second set of electrodes for electrostatic actuation and sensing of the MEMS resonating element in an out-of-plane mode, wherein the second set of electrodes is electrically isolated from the first set of electrodes, wherein the second set of electrodes is located in the second layer or the first layer of the MEMS device, and wherein the out-of-plane mode comprises one of a torsional mode or a saddle mode.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

18/324,902Filed 26 May 2023 · continuation

Priority

2 Jul 2014

Published

US 2023/0308076 A128 Sep 2023

Granted

3 Sep 2024

Term ends

Not estimatedThe source records don’t support an estimate.

Classification32 codes

H03H 9/02228
Details: guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a…
H03H 9/1057
Mounting in enclosures: for microelectro-mechanical devices
B81B 7/007
Packages or encapsulation: interconnections between the MEMS and external electrical signals
B81C 1/00182
Comprising flexible or deformable structures: arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a…

Family

Application62/020,049Us provisional application · filed 2 Jul 2014

Application14/790,220Parent of this continuation · filed 2 Jul 2015

Application16/369,757Parent of this continuation-in-part · filed 29 Mar 2019

US 10,291,200 B2Parent of this continuation · filed 14 May 2019

Application16/948,328Parent of this continuation · filed 14 Sep 2020

US 11,479,460 B2Parent of this continuation-in-part · filed 25 Oct 2022

US 2023/0308076 A1Pre-grant publication · published 28 Sep 2023

US 11,664,781 B2Parent of this continuation

Application16/948,328Parent of this continuation-in-part

Application16/369,757Parent of this continuation

US 2016/0006414 A1Published application

US 2019/0225488 A1Published application

US 2020/0407218 A1Published application

US 12,081,192 B2This patent

From the US filing history. Foreign family members aren’t listed.

Methods and devices for microelectromechanical resonators

Life of this patent

Methods and devices for microelectromechanical resonators

Life of this patent

Abstract

Claims28