Semiconductor drive device, semiconductor device, and power conversion device
AssigneeMitsubishi Electric Corporation
InventorsYohei Mitsui, Yasutaka Imamura, Junichi Nakashima
Life of this patent
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Abstract
A semiconductor drive device includes a drive circuit that drives a semiconductor switching element, a passive element connected to a gate of the semiconductor switching element to prevent a gate current of the semiconductor switching element, a switching element connected in series to the passive element, a control circuit that controls the switching element, and a temperature detection circuit that detects a temperature of the semiconductor switching element. The control circuit controls the switching element such that when the temperature detected by the temperature detection circuit is high, the gate current is prevented more than when the temperature is low.
Claims20
A semiconductor drive device comprising:
- a drive circuit to drive a semiconductor switching element;
- a passive element connected to a gate of the semiconductor switching element to prevent a gate current of the semiconductor switching element;
- a switching element connected in series to the passive element;
- a control circuit to control the switching element;
- and
- a temperature detection circuit to detect a temperature of the semiconductor switching element,
- wherein the control circuit controls the switching element such that when the temperature detected by the temperature detection circuit is high, the gate current is prevented more than when the temperature is low.
A semiconductor device comprising:
- a plurality of semiconductor switching elements connected in parallel to each other;
- a plurality of semiconductor drive devices provided corresponding to the plurality of semiconductor switching elements;
- a drive circuit to drive the plurality of semiconductor switching elements,
- each of the plurality of semiconductor drive devices including
- a passive element connected to a gate of the corresponding semiconductor switching element to prevent a gate current of the corresponding semiconductor switching element,
- a switching element connected in series to the passive element, and
- a temperature detection circuit to detect a temperature of the corresponding semiconductor switching element;
- and
- a control circuit to control the switching element in each of the plurality of semiconductor drive devices, wherein
- the control circuit controls the switching element in each of the plurality of semiconductor drive devices such that when the temperature detected by the temperature detection circuit is high, the gate current is prevented more than when the temperature is low in each of the plurality of semiconductor drive devices.
A semiconductor device comprising:
- a plurality of semiconductor switching elements connected in parallel to each other;
- a plurality of temperature detection circuits provided corresponding to the plurality of semiconductor switching elements, each of the plurality of temperature detection circuits detecting a temperature of the corresponding semiconductor switching element;
- a drive circuit to drive the plurality of semiconductor switching elements;
- a passive element connected to a gate of each of the plurality of semiconductor switching elements to prevent a gate current of each of the plurality of semiconductor switching elements;
- a switching element connected in series to the passive element;
- and
- a control circuit to control the switching element,
- wherein the control circuit controls the switching element in each of the plurality of semiconductor switching elements such that when a temperature detected by the corresponding temperature detection circuit is high, the gate current is prevented more than when the temperature is low.
Dependencies are inferred from the claim text.