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US 12,080,671 B2Granted
Layered bonding material, semiconductor package, and power module
AssigneeSenju Metal Industry Co., Ltd.
InventorsNaoto Kameda, Kanta Dei, Masato Tsuchiya
Life of this patent
Estimating the term…
Abstract
A layered bonding material 10 includes a base material 11, a first solder section 12a stacked on a first surface of the base material 11, and a second solder section 12b stacked on a second surface of the base material 11. A coefficient of linear expansion of the base material 11 is 5.5 to 15.5 ppm/K, the first solder section 12a and the second solder section 12b are made of lead-free solder, and both of a thickness of the first solder section 12a and a thickness of the second solder section 12b are 0.05 to 1.0 mm.
Claims18
A layered bonding material comprising:
- a base material;
- a first solder section stacked on a first surface of the base material;
- and
- a second solder section stacked on a second surface of the base material, wherein
- a coefficient of linear expansion of the base material is 5.5 to 15.5 ppm/K,
- the first solder section and the second solder section are made of lead-free solder, and
- both of a thickness of the first solder section and a thickness of the second solder section are 0.05 to 1.0 mm.
4 more elements
A semiconductor package comprising:
- a substrate;
- a semiconductor device disposed on the substrate;
- and
- a layered bonding material disposed between the substrate and the semiconductor device and bonding the substrate and the semiconductor device, wherein
- the layered bonding material includes:
- a base material;
- a first solder section stacked on a first surface of the base material;
- and
- a second solder section stacked on a second surface of the base material,
- a coefficient of linear expansion of the base material is 5.5 to 15.5 ppm/K,
- the first solder section and the second solder section are made of lead-free solder, and
- both of a thickness of the first solder section and a thickness of the second solder section are 0.05 to 1.0 mm.
9 more elements
A semiconductor package comprising:
- a substrate;
- a semiconductor device disposed on the substrate;
- a first layered bonding material disposed between the substrate and the semiconductor device and bonding the substrate and the semiconductor device;
- a heat radiating section disposed on an opposite side of the semiconductor device on the substrate;
- and
- a second layered bonding material disposed between the substrate and the heat radiating section and bonding the substrate and the heat radiating section, wherein
- at least one of the first layered bonding material and the second layered bonding material includes:
- a base material;
- a first solder section stacked on a first surface of the base material;
- and
- a second solder section stacked on a second surface of the base material,
- a coefficient of linear expansion of the base material is 5.5 to 15.5 ppm/K,
- the first solder section and the second solder section are made of lead-free solder, and
- both of a thickness of the first solder section and a thickness of the second solder section are 0.05 to 1.0 mm.
11 more elements
A power module comprising:
- a substrate;
- a power semiconductor device disposed on the substrate;
- and
- a layered bonding material disposed between the substrate and the power semiconductor device and bonding the substrate and the power semiconductor device, wherein
- the layered bonding material includes:
- a base material;
- a first solder section stacked on a first surface of the base material;
- and
- a second solder section stacked on a second surface of the base material,
- a coefficient of linear expansion of the base material is 5.5 to 15.5 ppm/K,
- the first solder section and the second solder section are made of lead-free solder, and
- both of a thickness of the first solder section and a thickness of the second solder section are 0.05 to 1.0 mm.
9 more elements
A power module comprising:
- a substrate;
- a power semiconductor device disposed on the substrate;
- a first layered bonding material disposed between the substrate and the power semiconductor device and bonding the substrate and the power semiconductor device;
- a heat radiating section disposed on an opposite side of the power semiconductor device on the substrate;
- and
- a second layered bonding material disposed between the substrate and the heat radiating section and bonding the substrate and the heat radiating section, wherein
- at least one of the first layered bonding material and the second layered bonding material includes:
- a base material;
- a first solder section stacked on a first surface of the base material;
- and
- a second solder section stacked on a second surface of the base material,
- a coefficient of linear expansion of the base material is 5.5 to 15.5 ppm/K,
- the first solder section and the second solder section are made of lead-free solder, and
- both of a thickness of the first solder section and a thickness of the second solder section are 0.05 to 1.0 mm.
11 more elements
Dependencies are inferred from the claim text.