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US 12,080,506 B2Granted
Silicon-based vacuum transistors and integrated circuits
AssigneePurdue Research Foundation
InventorsSaeed Mohammadi, Shabnam Ghotbi
Life of this patent
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Abstract
A field emitter array (FEA) vacuum transistor is disclosed which includes a substrate and a plurality of nanorods formed of a first polarity dopant on the substrate.
Claims14
A field emitter array (FEA) vacuum transistor, comprising:
- a substrate;
- and
- a plurality of nanorods formed of a first polarity dopant on the substrate.
Dependencies are inferred from the claim text.