Polishing pad with improved crosslinking density and process for preparing the same
AssigneeSK enpulse Co., Ltd.
InventorsJong Wook Yun, Eun Sun Joeng, Hye Young Heo, Jang Won Seo
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Abstract
The present invention provides a polishing pad whose crosslinking density is adjusted to enhance the performance of the CMP process such as polishing rate and cut pad rate. In addition, in the process for preparing a polishing pad according to the embodiment, it is possible to implement such a crosslinking density by a simple method of controlling the preheating temperature of the mold for curing. Thus, the polishing pad may be applied to a process of preparing a semiconductor device, which comprises a CMP process, to provide a semiconductor device such as a wafer of excellent quality.
Claims10
A polishing pad, which comprises a polishing layer comprising a porous polyurethane-based resin, wherein the polishing layer has a swelling ratio of 100% to 350% in dimethylformamide (DMF) based on the volume or weight of the polishing layer, and
- the polishing layer has a swelling ratio of 150% to 450% in N-methyl-2-pyrrolidone (NMP) based on the volume or weight of the polishing layer, when the polishing layer is stored in each of DMF and NMP at room temperature for 24 hours.
A process for preparing a semiconductor device, which comprises polishing the surface of a semiconductor substrate using a polishing pad, wherein the polishing pad comprises a polishing layer comprising a porous polyurethane-based resin, and the polishing layer has a swelling ratio of 100% to 350% in dimethylformamide (DMF) based on the volume or weight of the polishing layer, and wherein the polishing layer has a swelling ratio of 150% to 450% in N-methyl-2-pyrrolidone (NMP) based on the volume or weight of the polishing layer, when the polishing layer is stored in each of DMF and NMP at room temperature for 24 hours.
Dependencies are inferred from the claim text.