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US 12,074,034 B2Granted
Etchant compositions
AssigneeEntegris, Inc.
InventorChia-Jung Hsu
Life of this patent
Estimating the term…
Abstract
Provided are compositions and methods for selectively etching hard mask layers and/or photoresist etch residues relative to low-k dielectric layers that are present. More specifically, the present invention relates to a composition and process for selectively etching titanium nitride and/or photoresist etch residues relative to low-k dielectric layers. Other materials that may be present on the microelectronic device should not be substantially removed or corroded by said compositions.
Claims16
A composition comprising:
- a. a solvent mixture comprising:
- i. water;
- ii. a water-miscible organic solvent;
- iii. N-methylmorpholine-N-oxide, comprising about 2.5 to about 5 wt. % of the composition;
- and
- iv. dimethyl sulfone;
- b. an oxidizing agent, comprising about 15 wt. % of the composition;
- c. a chelating agent;
- d. a corrosion inhibitor, comprising phosphoric acid;
- and
- e. at least one etchant or pH adjustor,
- wherein the composition has a pH of about 5 to about 12.
9 more elements
Dependencies are inferred from the claim text.