Semiconductor die being connected with a clip and a wire which is partially disposed under the clip
AssigneeInfineon Technologies AG
InventorMark Pavier
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a first carrier, a first external contact, a second external contact, and a first semiconductor die. The first semiconductor die has a first main face, a second main face opposite to the first main face, a first contact pad disposed on the first main face, a second contact pad disposed on the second main face, a third contact pad disposed on the second main face, and a vertical transistor. The first semiconductor die is disposed with the first main face on the first carrier. A clip connects the second contact pad and the second external contact. A first wire is connected with the first external contact. The first wire is disposed at least partially under the clip.
Claims20
A semiconductor device, comprising:
- a first carrier;
- a first external contact and a second external contact;
- a first semiconductor die comprising a first main face, a second main face opposite to the first main face, a first contact pad disposed on the first main face, a second contact pad disposed on the second main face, a third contact pad disposed on the second main face, and a vertical transistor, the first semiconductor die being disposed with the first main face on the first carrier;
- a clip connecting the second contact pad and the second external contact, the clip having a thick portion and a thin portion, the clip comprising a cavity formed by the thin portion;
- and
- a first wire connected with the first external contact, the first wire being disposed completely under the cavity.
A semiconductor device, comprising:
- a first carrier;
- a first external contact and a second external contact;
- a first semiconductor die comprising a first main face, a second main face opposite to the first main face, a first contact pad disposed on the first main face, a second contact pad disposed on the second main face, a third contact pad disposed on the second main face, and a vertical transistor, the first semiconductor die being disposed with the first main face on the first carrier;
- a clip connecting the second contact pad and the second external contact, the clip having a thick portion and a thin portion, the clip comprising a cavity formed by the thin portion;
- a first wire connected with the first external contact, the first wire being disposed completely under the cavity;
- and
- a first insulation layer disposed on a portion of the clip which is disposed above the wire.
Dependencies are inferred from the claim text.