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US 12,068,253 B2Granted
Semiconductor structure with two-dimensional conductive structures
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShu-Wei Li, Yu-Chen Chan, Meng-Pei Lu, Shin-Yi Yang, Ming-Han Lee
Life of this patent
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Abstract
A semiconductor structure and method of manufacturing a semiconductor structure are provided. The semiconductor structure comprises at least one two-dimensional (2D) conductive structure; a dielectric layer disposed on the 2D conductive structure; and at least one interconnect structure disposed in the dielectric layer and extending into the 2D conductive structure, wherein the interconnect structure laterally connects to at least one edge of the 2D conductive structure.
Claims20
A semiconductor structure, comprising:
- a plurality of two-dimensional (2D) conductive structures;
- an isolation structure separating the 2D conductive structures;
- a dielectric structure longitudinally stacked on the 2D conductive structures and the isolation structure;
- and
- at least one interconnect structure disposed in the dielectric structure and extending along an interface between one of the 2D conductive structures and the isolation structure, so that the interconnect structure partially contacts the one of the 2D conductive structures and partially contacts the isolation structure,
- wherein the interconnect structure includes a bottom part disposed between the one of the 2D conductive structures and the isolation structure,
- wherein a top of each of the 2D conductive structures and a top of the isolation structure are coplanar, and
- wherein the bottom part of the interconnect structure has a tapered vertical cross sectional shape.
5 more elements
A semiconductor structure, comprising:
- a plurality of two-dimensional (2D) conductive structures;
- an isolation structure separating the 2D conductive structures;
- a dielectric structure longitudinally stacked on the 2D conductive structures and the isolation structure;
- and
- at least one interconnect structure disposed in the dielectric structure and extending along an interface between one of the 2D conductive structures and the isolation structure, so that the interconnect structure partially contacts the one of the 2D conductive structures and partially contacts the isolation structure,
- wherein the interconnect structure includes a bottom part disposed between the one of the 2D conductive structures and the isolation structure,
- wherein a top of the one of the 2D conductive structures and a top of the isolation structure are coplanar,
- wherein a lower surface of the bottom part of the interconnect structure, a bottom of the one of the 2D conductive structures and a bottom of the isolation structure are coplanar, and
- wherein the bottom part of the interconnect structure has a tapered vertical cross sectional shape.
6 more elements
A semiconductor structure, comprising:
- a plurality of two-dimensional (2D) conductive structures;
- an isolation structure separating the 2D conductive structures;
- a dielectric structure longitudinally stacked on the 2D conductive structures and the isolation structure;
- and
- at least one interconnect structure disposed in the dielectric structure and extending along an interface between one of the 2D conductive structures and the isolation structure, so that the interconnect structure partially contacts the one of the 2D conductive structures and partially contacts the isolation structure,
- wherein the interconnect structure includes a bottom part disposed between the one of the 2D conductive structures and the isolation structure,
- wherein a top of the one of the 2D conductive structures and a top of the isolation structure are coplanar,
- wherein a thickness of the isolation structure and a thickness of the plurality of 2D conductive structures are identical, and
- wherein the bottom part of the interconnect structure has a tapered vertical cross sectional shape.
6 more elements
Dependencies are inferred from the claim text.