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US 12,068,221 B2Granted
Plating for thermal management
AssigneeTexas Instruments Incorporated
InventorsNazila Dadvand, Christopher Daniel Manack, Salvatore Frank Pavone
Life of this patent
Estimating the term…
Abstract
Described examples include a process that includes forming a diffusion barrier layer on a backside of a semiconductor wafer. The process also includes forming a seed copper layer on the diffusion barrier layer. The process also includes forming a copper layer on the seed copper layer. The process also includes immersion plating a silver layer on the copper layer.
Claims11
A process for making a semiconductor device, comprising:
- forming a first diffusion barrier layer on an active side of a semiconductor wafer;
- forming a second diffusion barrier layer on a backside of the semiconductor wafer;
- forming a first seed copper layer on the first diffusion barrier layer;
- forming a second seed copper layer on the second diffusion barrier layer;
- forming a first copper layer on the first seed copper layer;
- forming a second copper layer on the second seed copper layer;
- and
- immersion plating a silver layer on the second copper layer.
5 more elements
A process for making a semiconductor device, comprising:
- thinning a backside of a semiconductor wafer, the backside opposite an active side of the semiconductor wafer;
- depositing a titanium-tungsten (TiW) layer on the backside;
- forming a copper seed layer on the TiW layer;
- forming photolithographic pattern over an area between dies on the semiconductor wafer;
- removing some of the photolithographic pattern exposing surfaces of the copper seed layer;
- forming a copper layer on exposed surfaces of the copper seed layer;
- and
- forming a silver layer on the copper layer using immersion plating.
5 more elements
A process for making a semiconductor device, comprising:
- thinning a backside of a semiconductor wafer, the backside opposite an active side of the semiconductor wafer;
- depositing a titanium-tungsten (TiW) layer on both the active side and the backside of the semiconductor wafer;
- forming a seed copper layer on the TiW layer;
- forming photoresist layers over an area between dies and on the backside of the semiconductor wafer;
- patterning the photoresist layers to expose surfaces of the seed copper layer;
- forming a copper layer on exposed surfaces of the seed copper layer;
- removing the photoresist layer;
- etching the seed copper layer and the TiW layer using the copper layer as a mask;
- and
- forming a silver layer on the copper layer at the backside of the wafer using immersion plating.
7 more elements
Dependencies are inferred from the claim text.