Method for lithography process
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChi-Hung Liao, Yueh-Lin Yang
Life of this patent
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Abstract
A method includes holding a mask using an electrostatic chuck. The mask includes a substrate having a first bump and a second bump separated from the first bump and a patterned layer. The first bump and the second bump face the electrostatic chuck. The substrate is between the patterned layer and the electrostatic chuck. The first bump and the second bump are spaced apart from the patterned layer. The first bump and the second bump are ring strips in a top view, and the first bump has a rectangular cross section and the second bump has a triangular cross section. The method further includes generating extreme ultraviolet (EUV) radiation using an EUV light source; and directing the EUV radiation toward the mask, such that the EUV radiation is reflected by the mask.
Claims20
A method comprising:
- holding a mask using an electrostatic chuck, wherein the mask comprises:
- a substrate having a plurality of first bumps and a plurality of second bumps separated from the first bumps, wherein the first bumps and the second bumps face the electrostatic chuck;
- and
- a patterned layer, wherein the substrate is between the patterned layer and the electrostatic chuck, the first bumps and the second bumps are spaced apart from the patterned layer, the first bumps and the second bumps are ring strips in a top view, and each of the first bumps has a rectangular cross section arranged in a ring or circle form in the top view and each of the second bumps has a triangular cross section arranged in a ring or circle form in the top view, the first and second bumps are interconnected by flat segments of a surface of the substrate, the flat segments are spaced apart from the electrostatic chuck, and the mask further comprises a discontinuous protecting layer covering the bumps;
- generating extreme ultraviolet (EUV) radiation using an EUV light source;
- and
- directing the EUV radiation toward the mask, such that the EUV radiation is reflected by the mask.
A method comprising:
- holding a mask that includes a substrate by using an electrostatic chuck, wherein the mask comprises a plurality of bumps facing the electrostatic chuck, the bumps are interconnected by flat segments of a surface of the substrate facing the electrostatic chuck, the flat segments are spaced apart from the electrostatic chuck, a width of each of the bumps ranges between about 1 mm to about 3 mm, and the mask further comprises a protecting layer covering the bumps, but not the flat segments of the surface of the substrate;
- generating extreme ultraviolet (EUV) radiation using an EUV light source;
- and
- directing the EUV radiation toward the mask, such that the EUV radiation is reflected by the mask.
A method comprising:
- providing a reflection-type mask, wherein the reflection-type mask comprises:
- a substrate;
- a patterned layer;
- and
- a light-reflecting structure between the substrate and the patterned layer, wherein the substrate has a plurality of bumps on a surface of the substrate facing away from the light-reflecting structure, the bumps and the substrate are integrally formed, the bumps are separated from each other by a pitch;
- holding the reflection-type mask on an electrostatic chuck such that the reflection-type mask is in contact with the electrostatic chuck, wherein the bumps are interconnected by flat segments of the surface of the substrate, the flat segments are spaced apart from the electrostatic chuck, a width of the bumps ranges between about 1 mm to about 3 mm, and the reflection-type mask further comprises a protecting layer covering the bumps, but not the flat segments of the surface of the substrate;
- and
- performing a lithography process with the reflection-type mask.
Dependencies are inferred from the claim text.