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US 12,065,602 B2Granted
Phosphor compositions with orange and amber light emission
AssigneeOSRAM Opto Semiconductors GmbH
InventorHiroaki Miyagawa
Life of this patent
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Abstract
A phosphor, wherein the phosphor has a formula: VIII(Y1-x-z-w,Luz,Gdw,Cex)3VI(Al1-yMny)2IV(Al1-2y/3,Si2y/3)3O12, wherein 0<x≤0.05, 0<y≤0.04, 0<x+z<1, 0≤w≤0.50 when z≠0, 0≤w≤0.35 when z=0, and 0<x+z+w≤1, is described. Furthermore, a light-emitting device and methods for preparing the phosphor and the light-emitting device are described.
Claims11
A garnet phosphor ceramic, wherein the garnet phosphor has a formula:
- VIII(Y1-x-z-w,Luz,Gdw,Cex)3VI(Al1-yMny)2IV(Al1-2y/3,Si2y/3)3O12,
- wherein
- (i) 0<x≤0.05,
- 0.01<y≤0.03,
- z=0,
- 0.15<w<0.40, and
- a sintering temperature is in a range of 1750-1800° C. and an internal quantum efficiency in a range of 87-94%;
- or
- (ii) 0.01<x≤0.05,
- 0.015<y≤0.03,
- z>0.4,
- 0.25≤w<0.5,
- 1-x-z-w=0, and
- a sintering temperature is at 1800° C. and a internal quantum efficiency in a range of 83-91%;
- or
- (iii) 0.01<x≤0.03,
- 0.015<y≤0.03,
- 0.3≤w≤0.50,
- 0.1<z<0.35,
- 0.2<1-x-z-w<0.5 and
- a sintering temperature is in a range of 1775-1800° C. and a internal quantum efficiency in a range of 85-87%.
18 more elements
A light emitting device comprising:
- a LED die, and
- at least one garnet phosphor ceramic, wherein the at least one garnet phosphor has a formula:
- VII(Y1-x-z-w,Luz,Gdw,Cex)3VI(Al1-y,Mny)2IV(Al1-2y/3,Si2y/3)3O12,
- wherein
- (i) 0<x≤0.05,
- 0.01<y≤0.03,
- z=0,
- 0.15<w<0.40, and
- a sintering temperature is in a range of 1750-1800° C. and an internal quantum efficiency in a range of 87-94%;
- or
- (ii) 0.01<x≤0.05,
- 0.015<y≤0.03,
- z>0.4,
- 0.2≤w≤0.5,
- 1-x-z-w=0, and
- a sintering temperature is at 1800° C. and a internal quantum efficiency in a range of 83-91%;
- or
- (iii) 0.01<x≤0.03,
- 0.015<y≤0.03,
- 0.3≤w≤0.50,
- 0.1<z<0.35,
- 0.2<1-x-z-w<0.5, and
- a sintering temperature is in a range of 1775-1800° C. and a internal quantum efficiency in a range of 85-87%.
20 more elements
A method for preparing a garnet phosphor ceramic with the garnet phosphor having a formula:
- VII(Y1-x-z-w,Luz,Gdw,Cex)3VI(Al1-y,Mny)2IV(Al1-2y/3,Si2y/3)3O12,
- wherein
- (i) 0<x≤0.05,
- 0.01<y≤0.03,
- z=0,
- 0.15<w<0.40, and
- a sintering temperature is in a range of 1750-1800° C. and an internal quantum efficiency in a range of 87-94%;
- or
- (ii) 0.01<x≤0.05,
- 0.015<y≤0.03,
- z>0.4,
- 0.2≤w≤0.5,
- 1-x-z-w=0, and
- a sintering temperature is at 1800° C. and a internal quantum efficiency in a range of 83-91%;
- or
- (iii) 0.01<x≤0.03,
- 0.015<y≤0.03,
- 0.3≤w≤0.50,
- 0.1<z<0.35,
- 0.2<1-x-z-w<0.5, and
- a sintering temperature is in a range of 1775-1800° C. and a internal quantum efficiency in a range of 85-87%
- the method comprising:
- preparing a mixture of inorganic and/or organic precursors,
- wherein
- the Y precursor is selected from nitrates, hydroxides, organometallic compounds, oxides, yttrium containing mixed oxides and combination thereof;
- the Lu precursor is selected from nitrates, hydroxides, organometallic compounds, oxides, lutetium containing mixed oxides, and combination thereof;
- the Gd precursor is selected from nitrates, hydroxides, organometallic compound, oxides, gadolinium containing mixed oxides, and combination thereof;
- the Ce precursor is selected from nitrates, carbonates, hydroxides, organometallic compound, oxides, cerium containing mixed oxides, and combination thereof;
- the Al precursor is selected from nitrates, hydroxides, organometallic compound, oxides, aluminum containing mixed oxides, and combination thereof;
- the Mn precursor is selected from nitrates, carbonates, hydroxides, organometallic compound, oxides, cerium containing mixed oxides, and combination thereof;
- and
- the Si precursor is selected from silicates, oxides, silicon containing mixed metal oxides and combination thereof;
- and
- sintering the mixture:
- at a temperature range of 1750-1800° C. for preparing the garnet phosphor ceramic with the garnet phosphor having the formula in accordance with alternative (i),
- at a temperature of 1800° C. for preparing the garnet phosphor ceramic with the garnet phosphor having the formula in accordance with alternative (ii) or
- at a temperature range of 1775-1800° C. for preparing the garnet phosphor ceramic with the garnet phosphor having the formula in accordance with alternative (iii).
34 more elements
A method of preparing a light emitting device, the method comprising:
- providing a LED die;
- and
- attaching to the LED die a wavelength converting element, comprising a garnet phosphor ceramic
- wherein the garnet phosphor has a formula:
- VIII(Y1-x-z-w,Luz,Gdw,Cex)3VI(Al1-y,Mny)2IV(Al1-2y/3,Si2y/3)3O12,
- wherein
- (i) 0<x≤0.05,
- 0.01<y≤0.03,
- z=0,
- 0.15<w<0.40, and
- a sintering temperature is in a range of 1750-1800° C. and an internal quantum efficiency in a range of 87-94%;
- or
- (ii) 0.01<x≤0.05,
- 0.015<y≤0.03,
- z>0.4,
- 0.2≤w≤0.5,
- 1-x-z-w=0, and
- a sintering temperature is at 1800° C. and a internal quantum efficiency in a range of 83-91%;
- or
- (iii) 0.01<x≤0.03,
- 0.015<y≤0.03,
- 0.3≤w≤0.50,
- 0.1<z<0.35,
- 0.2<1-x-z-w<0.5, and
- a sintering temperature is in a range of 1775-1800° C. and a internal quantum efficiency in a range of 85-87%.
22 more elements
Dependencies are inferred from the claim text.