Semiconductor device including a capacitor
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHong-Yang Chen, Tian Sheng Lin, Yi-Cheng Chiu, Hung-Chou Lin, Yi-Min Chen, Kuo-Ming Wu, Chiu-Hua Chung
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Abstract
A capacitor structure for a power semiconductor device includes a semiconductor substrate, an isolation insulating layer having a ring-shape and including an outer periphery and an inner periphery defining an opening region, a first electrode disposed on the isolation insulating layer, a dielectric layer disposed on the first electrode, and a second electrode disposed on the dielectric layer.
Claims20
A method of manufacturing a capacitor structure, the method comprising:
- forming a well structure in a semiconductor substrate;
- forming an isolation insulating layer on the semiconductor substrate, the isolation insulating layer having a ring-shape and comprising an outer periphery and an inner periphery defining an opening region;
- forming a first electrode over the isolation insulating layer;
- forming a dielectric layer on the first electrode;
- and
- forming a second electrode over the dielectric layer.
A method of manufacturing a capacitor structure, the method comprising:
- forming a well structure in a semiconductor substrate,
- wherein the well structure comprises a first conductivity type well surrounded by a ring-shaped second conductivity type well;
- forming an isolation insulating layer over the first conductivity type well, the isolation insulating layer having a ring-shape and comprising an outer periphery and an inner periphery defining an opening region;
- forming a first conductive layer and patterning the first conductive layer to form a first electrode disposed on the isolation insulating layer;
- forming a dielectric layer over the first electrode;
- and
- forming a second conductive layer and patterning the second conductive layer to form a second electrode over the isolation insulating layer.
A method of manufacturing a capacitor structure, the method comprising:
- forming an isolation insulating layer over a semiconductor substrate, the isolation insulating layer having a ring-shape and comprising an outer periphery and an inner periphery defining an opening region;
- forming a well structure in the semiconductor substrate,
- wherein the well structure comprises a first conductivity type well surrounded by a ring-shaped second conductivity type well;
- forming a first conductive layer and patterning the first conductive layer to form a first electrode disposed on the isolation insulating layer;
- forming a dielectric layer over the first electrode;
- and
- forming a second conductive layer over the isolation insulating layer.
Dependencies are inferred from the claim text.