Crystallization process of oxide semiconductor, and method of manufacturing thin film transistor, a thin film transistor, a display panel, and an electronic device
AssigneeAdrc. Co. Kr
InventorsSoon Ho Choi, Chae Yeon Hwang, Hyo Min Kim
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Abstract
Disclosed are a crystallization process of an oxide semiconductor, a method of manufacturing a thin film transistor including the same, a thin film transistor, a display panel, and an electronic device. The crystallization process of an oxide semiconductor includes forming an amorphous oxide semiconductor layer on a substrate, forming a crystallization auxiliary layer including a light absorbing inorganic material on the amorphous oxide semiconductor layer, and annealing the crystallization auxiliary layer to crystallize the amorphous oxide semiconductor layer.
Claims20
A crystallization process of an oxide semiconductor, comprising:
- forming an amorphous oxide semiconductor layer on a substrate,
- forming a crystallization auxiliary layer on the amorphous oxide semiconductor layer, the crystallization auxiliary layer including a light absorbing inorganic material, and
- annealing the crystallization auxiliary layer to crystallize the amorphous oxide semiconductor layer,
- wherein the light absorbing inorganic material comprises amorphous silicon.
Dependencies are inferred from the claim text.