Low cost three-dimensional stacking semiconductor assemblies

A method of making a semiconductor device package assembly, the method comprising:

• providing a first semiconductor device package having a front side and a back side, the first semiconductor device package having a first metallization structure at the front side and a first substrate at the back side, the first metallization structure being exposed from the back side via a recess;
• providing a second semiconductor device package having a first side and a second side, the second semiconductor device package having a second metallization structure at the first side and a second substrate at the second side;
• positioning a thermoset material between the back side of the first semiconductor device package and the first side of the second semiconductor device package, wherein a plurality of discrete conductive particles are disposed in the thermoset material in a first position in which at least a portion of the plurality of discrete conductive particles are disposed outside of alignment with the recess;
• and
• applying pressure to the first semiconductor device package or the second semiconductor device package to cause the plurality of discrete conductive particles to reorient from the first position and flow into the recess to form an interconnect structure at least partially positioned in the recess and electrically coupling the second metallization structure to the first metallization structure, wherein reorienting from the first position comprises the portion of the plurality of discrete conductive particles disposed outside of alignment with the recess flowing into the recess and forming a portion of the interconnect structure.

A method of making a semiconductor device package assembly, the method comprising:

• providing a first substrate having a front side and a back side, the substrate having a passivation layer at the front side;
• disposing a first metallization structure at the front side within the passivation layer;
• removing material from the back side to create a recess that exposes the first metallization structure from the back side and forms a contacting region within the recess;
• providing a second substrate having a first side with a second metallization structure;
• positioning a thermoset material between the back side of the first substrate and the first side of the second substrate, wherein a plurality of discrete conductive particles are disposed in the thermoset material in a first position in which at least a portion of the plurality of discrete conductive particles are disposed outside of alignment with the recess;
• and
• reorienting the plurality of discrete conductive particles from the first position to form an interconnect structure that includes the discrete conductive particles electrically coupled to one another, the interconnect structure electrically coupling the first metallization structure and the second metallization structure at the contacting region, wherein reorienting from the first position comprises the portion of the plurality of discrete conductive particles disposed outside of alignment with the recess flowing into the recess and forming a portion of the interconnect structure.