Method of manufacturing semiconductor devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLi-Chao Yin, Hung-Bin Lin, Hsin-Hsien Wu, Chih-Ming Ke, Chyi Shyuan Chern, Ming-Hua Lo
Life of this patent
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Abstract
In a method, a structure including two or more materials having different coefficients of thermal expansion is prepared, and the structure is subjected to a cryogenic treatment. In one or more of the foregoing and following embodiments, the structure includes a semiconductor wafer and one or more layers are formed on the semiconductor wafer.
Claims20
A method of manufacturing an electronic device, comprising:
- preparing a structure including two or more materials having different coefficients of thermal expansion;
- measuring warpage of the structure;
- determining whether the warpage is within a threshold range;
- and
- when the warpage is outside the threshold range, subjecting the structure to a cryogenic treatment using a gaseous coolant, wherein:
- during the cryogenic treatment operation, none of an ion implantation operation, an etching operation, a patterning operation and a film deposition operation is performed, and
- the cryogenic treatment includes cooling the structure to a first temperature in a range from −10° C. to −100° C.
A method of manufacturing a semiconductor device, the method comprising:
- performing a first manufacturing operation on or over a substrate;
- measuring warpage of the substrate;
- determining whether the warpage is within a threshold range;
- when the warpage is outside the threshold range performing a cryogenic treatment operation including cooling the substrate to a first temperature in a range from −10° C. to −273° C. after the first manufacturing operation;
- and
- performing a second manufacturing operation on or over the substrate after performing the cryogenic treatment operation, wherein:
- during the cryogenic treatment operation, no ion implantation operation is performed, and
- the second manufacturing operation includes a film formation operation performed at a temperature of 250° C. or more or an etching operation performed at a temperature of 200° C. or more.
A method of manufacturing an electronic device, comprising:
- preparing a substrate including two or more materials having different coefficients of thermal expansion;
- and
- performing a first manufacturing operation on or over the substrate;
- measuring warpage of the substrate;
- determining whether the warpage is within a threshold range;
- when the warpage is outside the threshold range performing a cryogenic treatment operation including cooling the substrate to a first temperature in a range from −10° C. to −273° C. after the first manufacturing operation;
- and
- performing a second manufacturing operation on or over the substrate after performing the cryogenic treatment operation, wherein:
- during the cryogenic treatment operation, none of an ion implantation operation, an etching operation, a patterning operation and a film deposition operation is performed, and
- at least one of the first and second manufacturing operations includes a film formation operation performed at a temperature of 250° C. or more or an etching operation performed at a temperature of 200° C. or more.
Dependencies are inferred from the claim text.