Crystalline silicon carbide fiber and method for manufacturing same, and ceramic composite substrate
AssigneeUbe Corporation
InventorsYuusuke Tominaga, Hiroyuki Yamaoka, Kouichirou Suyama, Hideki Ozawa, Mao Sumino
Life of this patent
Estimating the term…
Abstract
A crystalline silicon carbide fiber containing silicon carbide and boron nitride, the crystalline silicon carbide fiber having a content of Si of 64% to 72% by weight, a content of C of 28% to 35% by weight, and a content of B of 0.1% to 3.0% by weight, and including, at a surface portion, a composition gradient layer in which a content of silicon carbide increases while a content of boron nitride decreases toward a depth direction.
Claims22
A crystalline silicon carbide fiber comprising:
- silicon carbide;
- and
- boron nitride;
- the crystalline silicon carbide fiber having a content of Si of 64% to 72% by weight, a content of C of 28% to 35% by weight, a content of B of 0.1% to 3.0% by weight, and a content of Ti of less than 0.1% by weight, and
- the crystalline silicon carbide fiber including, at a surface portion, a composition gradient layer in which a content of silicon carbide increases while a content of boron nitride decreases toward a depth direction.
A method for manufacturing a crystalline silicon carbide fiber, the method comprising:
- a calcination step of heating an amorphous silicon carbide fiber containing boron to 1550° ° C. to 2200° C. in an inert atmosphere including nitrogen and thereby forming, at a surface portion, a composition gradient layer in which a content of silicon carbide increases while a content of boron nitride decreases toward a depth direction;
- wherein the content of Si is 64% to 72% by weight, the content of C is 28% to 35% by weight, the content of B is 0.1% to 3.0% by weight, and a content of Ti is less than 0.1% by weight.
Dependencies are inferred from the claim text.