Extreme ultraviolet lithography system
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSsu-Yu Chen, Po-Chung Cheng, Li-Jui Chen, Che-Chang Hsu, Chi Yang
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Abstract
An extreme ultraviolet (EUV) lithography system includes a vane bucket module. The vane bucket module includes a temperature adjusting pack and a collecting tank inserted into the temperature adjusting pack. The temperature adjusting pack has a plurality of inlets. The collecting tank has a cover and the cover includes a plurality of through holes. The inlets of the temperature adjusting pack are aligned with the through holes of the cover. Thicknesses of edges of the cover is different from a thickness of a center of the cover.
Claims20
An extreme ultraviolet (EUV) lithography system, comprising:
- a vane bucket module, comprising:
- a temperature adjusting pack having a plurality of inlets;
- and
- a collecting tank inserted into the temperature adjusting pack, wherein the collecting tank has a cover, the cover comprises a plurality of through holes, the inlets of the temperature adjusting pack are aligned with the through holes of the cover, and thicknesses of edges of the cover is different from a thickness of a center of the cover.
An extreme ultraviolet (EUV) lithography system, comprising:
- a collector, configured to collect and reflect EUV light generated from plasma;
- and
- a droplet generator, a droplet catcher, and a vane bucket module each spaced apart from one another, wherein the droplet generator, the droplet catcher, and the vane bucket module are disposed over the collector, and the vane bucket module comprises:
- a temperature adjusting pack having a plurality of inlets;
- and
- a collecting tank inserted into the temperature adjusting pack, wherein the collecting tank has a cover, the cover comprises a plurality of through holes, the inlets of the temperature adjusting pack are aligned with the through holes of the cover, the cover has a top surface facing the inlets of the temperature adjusting pack and a bottom surface opposite to the top surface, and the top surface of the cover is not flat.
An extreme ultraviolet (EUV) lithography system, comprising:
- a collector, configured to collect and reflect EUV light generated from plasma;
- and
- a droplet generator, a droplet catcher, and a vane bucket module each spaced apart from one another, wherein the droplet generator, the droplet catcher, and the vane bucket module surround a center of the collector, and the vane bucket module comprises:
- a collecting tank having a cover, the cover comprises a plurality of through holes, wherein each of the through holes has a first opening located at a top surface of the cover and a second opening located at a bottom surface of the cover, and a size of the first opening is different from a size of the second opening;
- and
- a temperature adjusting pack surrounding the collecting tank, wherein the temperature adjusting pack comprises a plurality of inlets aligned with the first openings of the through holes.
Dependencies are inferred from the claim text.