Electric field variable gas sensor including gas molecule adsorption inducing material and manufacturing method thereof
AssigneeResearch & Business Foundation Sungkyunkwan University
InventorsWoo Jong Yu, Young Rae Kim, Thanh Luan Phan
Life of this patent
Estimating the term…
Abstract
An electric field variable gas sensor includes a semiconductor substrate, an insulating film disposed on the semiconductor substrate, a semiconductor thin film material disposed on a part of the semiconductor substrate and a part of the insulating film, a gas molecule adsorption inducing material disposed on the semiconductor thin film material, a first electrode disposed on the semiconductor substrate to be spaced apart from the semiconductor thin film material, and a second electrode disposed on the insulating film to be connected with the semiconductor thin film material.
Claims20
An electric field variable gas sensor comprising:
- a semiconductor substrate;
- an insulating film disposed on the semiconductor substrate;
- a semiconductor thin film material disposed directly on a part of the semiconductor substrate and a part of the insulating film;
- a gas molecule adsorption inducing material disposed on the semiconductor thin film material;
- a first electrode disposed on the semiconductor substrate to be spaced apart from the semiconductor thin film material;
- and
- a second electrode disposed on the insulating film to be connected with the semiconductor thin film material.
A manufacturing method of an electric field variable gas sensor, the manufacturing method comprising:
- forming a semiconductor substrate;
- forming an insulating film on the semiconductor substrate;
- forming a semiconductor thin film material directly on a part of the semiconductor substrate and a part of the insulating film;
- forming a gas molecule adsorption inducing material on the semiconductor thin film material;
- forming a first electrode on the semiconductor substrate to be spaced apart from the semiconductor thin film material;
- and
- forming a second electrode on the insulating film to be connected with the semiconductor thin film material.
Dependencies are inferred from the claim text.