Surface emitting laser device, light-emitting device including the same and manufacturing method thereof

A surface emitting laser device, comprising:

• a substrate;
• a first reflective layer disposed on the substrate;
• an active layer disposed on the first reflective layer;
• an aperture region disposed on the active layer and including an aperture and an insulating region;
• and
• a second reflective layer disposed on the aperture region,
• wherein a doping level of the aperture region is (X+3)×E18 (atoms/cm3),
• wherein a ratio (b/a) of a second maximum diameter (b) to a first maximum diameter (a) of the aperture is [95.0−(2X/3)]% to [99.9−(X/3)]%, wherein X is 0 to 3,
• wherein the aperture region comprises a delta doped layer disposed between the active layer and the second reflective layer,
• wherein the aperture region comprises an insulating region, an aperture, and the delta doped layer, and the delta doped layer is disposed in the aperture.