Inversion channel devices on multiple crystal orientations

A method comprising:

• forming a unit cell of a silicon carbide device by
• forming a drift region of a first conductivity type;
• forming a first well region of a second conductivity type by a first ion-implantation;
• depositing and patterning a first hard mask layer followed by etching through the first well region using the patterned first hard mask layer to form a trench region;
• forming a first spacer, through the first hard mask layer, along trench sidewalls of the trench region and the first hard mask layer;
• and
• forming a second well region of the second conductivity type by a second ion-implantation through the first spacer located at a second section;
• wherein the second well region overlaps a portion of the first well region to form a composite well region at a first section,
• wherein the second well region is formed by the second ion-implantation using a tilt angle between 0 degrees and 60 degrees from a normal incidence angle.