Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, the method comprising:

• forming an active pattern on a substrate;
• forming a gate electrode extending across the active pattern;
• forming an active contact electrically connected to the active pattern and a gate contact electrically connected to the gate electrode, forming the active contact and the gate contact including forming a first hole exposing the active pattern and a second hole exposing the gate electrode, and forming a first metal nitride layer in the first hole and the second hole,
• wherein forming the first metal nitride layer includes:
• providing a first metal precursor on the substrate to form a first preliminary layer;
• and
• providing, to the first preliminary layer, a first reactant that is a nitrogen source and a first co-reactant, and
• wherein the first co-reactant is an organometallic compound represented by Chemical Formula 1 below:
• wherein, in Chemical Formula 1, M2 is selected from Sn, In, and Ge, n is 2, 3, or 4, each L1 is independently hydrogen, a halogen, or a functional group represented by Chemical Formula 2 below, provided that at least one L1 is the functional group represented by Chemical Formula 2,
• wherein, in Chemical Formula 2, x is 0, 1, 2, 3, 4, or 5 and y is 0 or 1, provided that y is 1 if x is 0, and R1, R2, R3, and R4 are each independently hydrogen, an alkyl group having 1 to 5 carbon atoms, or an aminoalkyl group having 1 to 5 carbon atoms.

A method of manufacturing a semiconductor device, the method comprising:

• forming a first region including a plurality of transistors;
• and
• forming a second region stacked on the first region,
• wherein forming the second region includes forming a semiconductor layer on the first region, forming an active pattern on the semiconductor layer, and forming a capacitor electrically connected to the active pattern,
• wherein forming the capacitor includes forming a first electrode, forming a dielectric layer on the first electrode, and forming a second electrode on the dielectric layer,
• wherein forming at least one of the first and second electrodes includes:
• providing a metal precursor to form a preliminary layer, and
• providing a reactant that is a nitrogen source and a co-reactant to the preliminary layer, and
• wherein the co-reactant is an organometallic compound represented by Chemical Formula 1 below:
• wherein, in Chemical Formula 1, M2 is selected from Sn, In, and Ge, n is 2, 3, or 4, each L1 is independently hydrogen, a halogen, or a functional group represented by Chemical Formula 2 below, provided that at least one L1 is the functional group represented by Chemical Formula 2,
• wherein, in Chemical Formula 2, x is 0, 1, 2, 3, 4, or 5 and y is 0 or 1, provided that y is 1 if x is 0, and R1, R2, R3, and R4 are each independently hydrogen, an alkyl group having 1 to 5 carbon atoms, or an aminoalkyl group having 1 to 5 carbon atoms.