Sputtering target, method of bonding target material and backing plate, and method of manufacturing sputtering target
AssigneeSumitomo Chemical Company, Limited
InventorsMasahiro Fujita, Koji Nishioka
Life of this patent
Estimating the term…
Abstract
A sputtering target comprising: a backing plate; and a target material bonded via a bonding material to a bonding region of the backing plate, wherein a bonding area of a bonding portion between the target material and the backing plate accounts for 97% or more of the area of the bonding region, and wherein a maximum defect area of portions without the bonding material present between the target material and the backing plate accounts for 0.6% or less of the area of the bonding region. The sputtering target enables manufacturing of the sputtering target in which the target material is hardly peeled off during sputtering.
Claims6
A sputtering target comprising:
- a backing plate;
- and
- a target material bonded via a bonding material to a bonding region of the backing plate;
- and
- a bonding layer formed of the bonding material between the target material and the backing plate, wherein
- a bonding area of a bonding portion between the target material and the backing plate accounts for 97% or more of the area of the bonding region, and wherein
- a maximum defect area of portions without the bonding material present between the target material and the backing plate accounts for 0.6% or less of the area of the bonding region, and
- a variation in thickness of the bonding layer is 50% or less, wherein
- the variation in thickness of the bonding layer can be obtained from an equation:
- (tmax−tmin)/(tmax+tmin)×100 (%) based on a maximum value (tmax) and a minimum value (tmin) of a thickness t (mm) of the bonding layer measured at any multiple points.
Dependencies are inferred from the claim text.