Driver for insulated gate transistor with circuit for compensating for time delays

A power stage comprising a power transistor and a driver, the power transistor comprising a collector (c′), a gate (g′) and an emitter (e′), the power transistor being configured to change over from a saturated state to an off state and vice versa in accordance with a control from the driver, the power stage comprising a resistor (Rg′) positioned between the driver and the gate (g′) of the power transistor, the power stage comprising a first circuit for compensating for delays that is positioned in parallel with the resistor (Rg′), the first circuit for compensating for delays comprising:

• a circuit for compensating for turn-on initialization delays, which is configured to divert a current from the resistor (Rg′) when a saturation of the power transistor is initialized,
• a circuit for compensating for turn-off initialization delays, which is configured to divert the current from the resistor (Rg′) when a switching-off of the power transistor is initialized, and
• a second circuit for compensating for delays that is configured to divert the current from the resistor (Rg′) when the power transistor is close to the saturated state;
• wherein the circuit for compensating for turn-on initialization delays comprises:
• a first signal diode (D10) configured to receive by way of its anode a control signal from the driver,
• a first signal transistor (T10) connected to the cathode of the signal diode (D10) via an emitter or a source (eT10) of the first signal transistor (T10), the first signal transistor (T10) comprising a base or a gate (bT10), and the first signal transistor comprising a collector or a drain (cT10) connected to the gate (g′) of the power transistor,
• a first resistor (R10), connected to the emitter or to the source (eT10) of the first signal transistor (T10), and connected to the base or to the gate (bT10) of the first signal transistor (T10), and
• a first signal capacitor (C10) connected to the base or to the gate (bT10) of the first signal transistor (T10), and to the gate (g′) of the power transistor.