Power amplifier device
AssigneeMurata Manufacturing Co., Ltd.
InventorsTsutomu Kobori, Shingo Yanagihara, Yoshifumi Takahashi, Hiroshi Okabe
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AssigneeMurata Manufacturing Co., Ltd.
InventorsTsutomu Kobori, Shingo Yanagihara, Yoshifumi Takahashi, Hiroshi Okabe
Estimating the term…
A power amplifier device includes a semiconductor substrate; a plurality of first transistors that are provided on the semiconductor substrate and receive input of a radio-frequency signal; a plurality of second transistors that are provided on the semiconductor substrate and electrically connected to the respective plurality of first transistors, and output a radio-frequency output signal obtained by amplifying the radio-frequency signal; a plurality of first bumps provided so as to overlay the respective plurality of first transistors; and a second bump provided away from the plurality of first bumps and provided so as not to overlay the plurality of first transistors and the plurality of second transistors. When viewed in plan from a direction perpendicular to a surface of the semiconductor substrate, a first transistor and a first bump, a second transistor, the second bump, a second transistor, and a first transistor and a first bump are arranged in sequence.
A power amplifier device comprising:
Dependencies are inferred from the claim text.