Method for testing memory by built-in self-test storage space and related device
AssigneeChangxin Memory Technologies, Inc.
InventorsHeng-Chia Chang, Chuanqi Shi, Li Ding
Life of this patent
Estimating the term…
Abstract
Embodiments of the present disclosure provide a memory test method and a device thereof, an electronic device, and a computer-readable storage medium, which relate to the field of semiconductor device testing technologies. The method is executed by a built-in self-test circuit and includes: acquiring defect information of a first memory by testing the first memory; acquiring repair information of the first memory based on the defect information of the first memory; and storing the repair information of the first memory in a second memory.
Claims11
A memory test method, the method being executed by a built-in self-test circuit and comprising:
- acquiring defect information of a first memory by testing the first memory, acquiring repair information of the first memory based on the defect information of the first memory, and storing the repair information of the first memory in a second memory;
- acquiring defect information of a third memory by testing the third memory, acquiring repair information of the third memory based on the defect information of the third memory, and storing the repair information of the third memory in the second memory;
- reading the repair information of the first memory and the repair information of the third memory from the second memory;
- and repairing the first memory based on the repair information of the first memory, and repairing the third memory based on the repair information of the third memory;
- and
- testing the first memory and the third memory again until it is confirmed that the first memory and the third memory are repaired successfully.
A memory test method, the method being executed by a built-in self-test circuit and comprising:
- acquiring defect information of a first memory by testing the first memory, acquiring repair information of the first memory based on the defect information of the first memory, storing the repair information of the first memory in a second memory, reading the repair information of the first memory from the second memory, and repairing the first memory based on the repair information of the first memory;
- and
- acquiring defect information of a third memory by testing the third memory, acquiring repair information of the third memory based on the defect information of the third memory, storing the repair information of the third memory in the first memory, reading the repair information of the third memory from the first memory, and repairing the third memory based on the repair information of the third memory.
A memory test device, the memory test device being provided in a built-in self-test circuit and comprising:
- a defect information acquiring circuit, configured to acquire defect information of a first memory by testing the first memory;
- a repair information acquiring circuit, configured to acquire repair information of the first memory based on the defect information of the first memory;
- a repair information storage circuit, configured to store the repair information of the first memory in a second memory;
- a first repair information reading circuit, configured to read the repair information of the first memory from the second memory;
- a first memory repairing circuit, configured to repair the first memory based on the repair information of the first memory;
- a memory testing circuit, configured to acquire defect information of a third memory by testing the third memory;
- a memory repair information acquiring circuit, configured to acquire repair information of the third memory based on the defect information of the third memory;
- a memory repair information storage circuit, configured to store the repair information of the third memory in the first memory;
- a second repair information reading circuit, configured to read the repair information of the third memory from the first memory;
- and
- a second memory repairing circuit, configured to repair the third memory based on the repair information of the third memory.
Dependencies are inferred from the claim text.