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US 12,044,966 B2Granted
Photoresist for semiconductor fabrication
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Cheng Liu, Yi-Chen Kuo, Yen-Yu Chen, Jr-Hung Li, Chi-Ming Yang, Tze-Liang Lee
Life of this patent
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Abstract
An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes an aromatic di-dentate ligand, a transition metal coordinated to the aromatic di-dentate ligand, and an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal. The aromatic di-dentate ligand includes a plurality of pyrazine molecules.
Claims20
An organometallic precursor, comprising:
- an aromatic di-dentate ligand;
- a transition metal coordinated to the aromatic di-dentate ligand;
- and
- an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal,
- wherein the aromatic di-dentate ligand comprises a plurality of pyrazine molecules.
2 more elements
An organometallic precursor, comprising:
- an aromatic di-dentate ligand comprising a first pyrazine ring and a second pyrazine ring;
- a transition metal coordinated to a nitrogen atom on the first pyrazine ring and a nitrogen atom on the second pyrazine ring;
- a first EUV cleavable ligand coordinated to the transition metal;
- and
- a second EUV cleavable ligand coordinated to the transition metal.
2 more elements
An organometallic precursor, comprising:
- an aromatic di-dentate ligand;
- a transition metal coordinated to the aromatic di-dentate ligand;
- and
- an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal,
- wherein the aromatic di-dentate ligand comprises a plurality of pyrazine molecules,
- wherein the transition metal is selected from a group consisting of tin (Sn), bismuth (Bi), antimony (Sb), indium (In), and tellurium (Te).
3 more elements
Dependencies are inferred from the claim text.