III-V/SI hybrid optoelectronic device and method of manufacture
AssigneeRockley Photonics Limited
InventorGuomin Yu
Life of this patent
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Abstract
A method of manufacturing an electro-optically active device. The method comprising the steps of: etching a cavity on a silicon-on-insulator wafer; providing a sacrificial layer adjacent to a substrate of a lll-V semiconductor wafer; epitaxially growing an electro-optically active structure on the lll-V semiconductor wafer; etching the epitaxially grown optically active structure into an electro-optically active mesa; disposing the electro-optically active mesa in the cavity of the silicon-on-insulator wafer and bonding a surface of the electro-optically active mesa, which is distal to the sacrificial layer, to a bed of the cavity; and removing the sacrificial layer between the substrate of the lll-V semiconductor wafer and the electro-optically active mesa.
Claims20
A method of manufacturing an electro-optically active device, comprising the steps of:
- etching a cavity on a silicon-on-insulator wafer;
- providing a sacrificial layer adjacent to a substrate of a III-V semiconductor wafer;
- epitaxially growing an electro-optically active structure on the III-V semiconductor wafer;
- etching the epitaxially grown electro-optically active structure into an electro-optically active mesa;
- disposing the electro-optically active mesa in the cavity of the silicon-on-insulator wafer and bonding a surface of the electro-optically active mesa, which is distal to the sacrificial layer, to a bed of the cavity;
- and
- removing the sacrificial layer between the substrate of the III-V semiconductor wafer and the electro-optically active mesa.
A method of manufacturing an electro-optically active device, comprising the steps of:
- providing a III-V semiconductor wafer, the wafer comprising:
- a substrate, a sacrificial layer, and an electro-optically active mesa;
- wherein the sacrificial layer is between the substrate and the electro-optically active mesa;
- providing a silicon-on-insulator wafer, including a cavity etched therein;
- disposing the electro-optically active mesa in the cavity of the silicon-on-insulator wafer, and bonding a surface of the electro-optically active mesa, which is distal to the sacrificial layer, to a bed of the cavity;
- and
- removing the sacrificial layer between the substrate of the III-V semiconductor wafer and the electro-optically active mesa.
Dependencies are inferred from the claim text.