Film formation apparatus and moisture removal method thereof

A film formation apparatus comprising:

• a chamber which an interior thereof can be placed under vacuum;
• an exhauster that exhausts the interior of the chamber;
• a carrier that circularly carries a workpiece by a rotation table provided inside the chamber;
• a plurality of plasma processors provided inside the chamber configured to perform plasma processing on the workpiece which is circularly carried;
• and
• a controller configured to control the exhauster, carrier and plurality of plasma processors,
• wherein:
• the plurality of the plasma processors each has a processing space divided by a dividing portion to perform the plasma processing,
• at least one of the plurality of the plasma processors is a film formation processor that performs film formation processing by sputtering on the workpiece which is circularly carried, at least one of the plurality of the plasma processors is a heater that performs film processing relative to a film produced on the workpiece by the film formation processor or heats the rotation table by producing inductively coupled plasma in the processing space of the heater,
• wherein the controller is configured to control:
• the heater to produce the inductively coupled plasma in the processing space of the heater to heat the rotation table before performing the film formation processing on the workpiece and to stop production of the plasma based on a moisture level in the processing space of the heater,
• the carrier to rotate the rotation table so as to pass through the processing space of the heater in which the inductively coupled plasma is produced in a state in which the workpiece is not loaded on the rotation table, and
• an exhauster to exhaust the interior of the chamber.