US 12,041,852 B2Granted

Silicon thermoelectric generator

AssigneeJuanita Castorena

InventorJon Murray Schroeder

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Abstract

Apparatus and associated methods relate to a thermoelectric device having a superconducting generator ring. In an illustrative example, a thermoelectric device may include a differential generator supply and a thermoelectric generator ring. The thermoelectric generator ring, for example, may be configured to generate an electric current based on a differential temperature received from the differential temperature supply. For example, the thermoelectric generator ring may include a number of thermoelectric coupons forming a ring on a horizontal plane. Each of the thermoelectric coupons may include an n-type impurity diffused silicon semiconductor (IDSS) and an p-type IDSS. For example, the impurities may be distributed in the IDSS at a predetermined concentration distribution, at which a forward bias voltage of the IDSS is below a predetermined target voltage (e.g., 20 mV) Various embodiments may advantageously generate a low-voltage loss high electric current based on an applied temperature differential at the thermoelectric coupons.

Claims18

Dependent claims

A thermoelectric device comprising:

a differential temperature supply and a thermoelectric generator ring, wherein:
the thermoelectric generator ring comprises a plurality of thermoelectric coupons forming a ring on a plane, and, each of the plurality of thermoelectric coupons comprises an n-type impurity diffused silicon semiconductor (IDSS) and a p-type IDSS, wherein each of the n-type IDSS and the p-type IDSS comprises:
impurities diffused at opposing surfaces of a silicon semiconductor wafer at a predetermined concentration distribution, wherein the predetermined concentration distribution comprises a higher concentration of the impurities at the opposing surfaces of the corresponding IDSS than a C concentration of the impurities in a center of a thickness of the corresponding IDSS;
and,
a forward bias voltage less than 20 mV,
wherein:
the ring is configured such that at least one of the opposing surfaces of the n-type IDSS and the p-type IDSS of each of the plurality of thermoelectric coupons are electrically coupled to corresponding surfaces of each adjacent thermoelectric coupon of the plurality of thermoelectric coupons such that,
in a current generation mode, a differential temperature is applied by the differential temperature supply to the plurality of thermoelectric coupons in a forward direction such that current is generated.

5 more elements

A thermoelectric device comprising:

a differential temperature supply and a thermoelectric generator ring, wherein:—
the thermoelectric generator ring comprises a plurality of thermoelectric coupons forming a ring on a plane, and,
each of the plurality of thermoelectric coupons comprises a p-type impurity diffused silicon semiconductors (IDSS) and an n-type IDSS operably coupled in series forming the ring, wherein each of the p-type IDSS and the n-type IDSS comprises:
impurities distributed at opposing surfaces of a silicon semiconductor wafer, wherein the impurities are distributed at a higher concentration at the opposing surfaces of the corresponding IDSS than at a center of a thickness of the corresponding IDSS;
and,
a forward bias voltage less than 20 mV,
wherein,
the ring is configured such that at least one of the opposing surfaces of the n-type IDSS and the p-type IDSS of each of the plurality of thermoelectric coupons are electrically coupled to corresponding surfaces of each adjacent thermoelectric coupon of the plurality of thermoelectric coupons such that,
in a current generation mode, a differential temperature is applied by the differential temperature supply to the plurality of thermoelectric coupons in a forward direction such that a current is generated.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 18/067,465Filed 16 Dec 2022
Published: US 2024/0206338 A120 Jun 2024
Granted: 16 Jul 2024
Term ends: Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10N 10/17
Operating with only the Peltier or Seebeck effects: characterised by the structure or configuration of the cell or thermocouple forming the device
H10N 10/10
Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects: operating with only the…
H10N 10/8552
Comprising compounds containing boron, carbon, oxygen or nitrogen: the compounds being superconducting
H10N 10/8556
Comprising inorganic compositions: comprising compounds containing germanium or silicon