High speed photosensitive devices and associated methods
AssigneeSiOnyx, Inc.
InventorsJames E. Carey, Drake Miller
Life of this patent
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Abstract
High speed optoelectronic devices and associated methods are provided. In one aspect, for example, a high speed optoelectronic device can include a silicon material having an incident light surface, a first doped region and a second doped region forming a semiconductive junction in the silicon material, and a textured region coupled to the silicon material and positioned to interact with electromagnetic radiation. The optoelectronic device has a response time of from about 1 picosecond to about 5 nanoseconds and a responsivity of greater than or equal to about 0.4 A/W for electromagnetic radiation having at least one wavelength from about 800 nm to about 1200 nm.
Claims17
A quantum efficiency enhanced optoelectronic device, comprising:
- a silicon device layer exhibiting a thickness in a range of about 1 micron to about 100 microns and having a first surface for receiving incident radiation;
- a first doped region at the first surface and a second doped region at the first surface forming at least one depletion region in the silicon device layer;
- a first contact connected to the first doped region;
- a textured region comprising a second contact, wherein the textured region is coupled to the silicon device layer and positioned on an opposite side of the first doped region and the second doped region and wherein the textured region is configured to interact with electromagnetic radiation that passes through the silicon device layer so as to increase the quantum efficiency of the optoelectronic device, wherein the optoelectronic device has a response time of from about 1 picosecond to about 5 nanoseconds and a responsivity of greater than or equal to about 0.4 A/W for electromagnetic radiation exhibiting at least one wavelength in a range of about 800 nanometers to about 1200 nanometers, and wherein the optoelectronic device is operable to determine a distance to an object based on a property of a reflected signal relative to an emitted optical signal.
Dependencies are inferred from the claim text.