Semiconductor device

A semiconductor device, comprising:

• a first semiconductor element having an element obverse face and an element reverse face facing toward opposite sides in a first direction;
• a support substrate that supports the first semiconductor element;
• a conductive block bonded to the element obverse face via a first conductive bonding material, and
• a metal member that is electrically connected to the first semiconductor element via the conductive block,
• wherein
• the conductive block has a thermal expansion coefficient smaller than a thermal expansion coefficient of the metal member,
• the conductive block and the metal member are bonded to each other by a weld portion at which a portion of the conductive block and a portion of the metal member are welded to each other,
• the metal member is a lead member,
• the conductive block comprises:
• a first block disposed on the first semiconductor element,
• the weld portion includes a first weld portion at which a portion of the lead member and a portion of the first block are welded to each other,
• the support substrate comprises:
• a first conductor that is electrically connected to the first semiconductor element via a second conductive bonding material, and
• a second conductor that is electrically connected to the first semiconductor element via the lead member,
• the semiconductor device comprises:
• a second semiconductor element that differs from the first semiconductor element, the second semiconductor element being bonded to the second conductor,
• a first terminal that is conductively bonded to the first conductor,
• a second terminal that is conductively bonded to the second semiconductor element, and
• a third terminal that is conductively bonded to the second conductor,
• the conductive block further comprises:
• a second block disposed on the second semiconductor element, the second terminal being electrically connected to the second semiconductor element via the second block,
• a length in the first direction of the first block is smaller than a length in the first direction of the second block,
• the second terminal includes an extending portion that extends from the first conductor to the second conductor when viewed in the first direction, and
• the extending portion is partially bonded to the second semiconductor element via the second block, and overlaps with the lead member as viewed in the first direction.

A semiconductor device comprising:

• a semiconductor element having an element obverse face and an element reverse face facing toward opposite sides in a first direction;
• a support substrate that supports the semiconductor element;
• a conductive block bonded to the element obverse face via a first conductive bonding material;
• and
• a metal member that is electrically connected to the semiconductor element via the conductive block, wherein
• the conductive block has a thermal expansion coefficient smaller than a thermal expansion coefficient of the metal member,
• the conductive block and the metal member are bonded to each other by a weld portion at which a portion of the conductive block and a portion of the metal member are welded to each other,
• the conductive block is disposed between the metal member and the semiconductor element in the first direction,
• the weld portion comprises a surface and an end portion, the surface facing to a same direction as the element obverse face in the first direction, the end portion being opposite to the surface in the first direction, and
• a line connecting a center of the surface and the end portion is tilted relative to the first direction.