Adjustment of program verify targets corresponding to a last programming distribution and a programming distribution adjacent to an initial programming distribution

A method comprising:

• determining, by a processing device, a plurality of difference error counts (Diff-EC) that are indicative of relative widths of valleys, wherein each of the valleys is located between a respective pair of program distributions of memory cells of a memory device;
• and
• performing a program targeting operation on a memory cell of the memory device to calibrate one or more program verify (PV) targets associated with the programming distributions, wherein performing the program targeting operation comprises:
• selecting a rule from a predefined set of rules based on the plurality of difference error counts, wherein the predefined set of rules corresponds to an adjusting of a PV target of a last programming distribution;
• and
• adjusting, based on the selected rule, the one or more PV targets of a plurality of PV targets associated with the programming distributions, wherein the one or more PV targets correspond to one or more respective voltage values for programming memory cells of the memory device.

A non-transitory computer-readable medium comprising instructions that, responsive to execution by a processing device, cause the processing device to perform operations comprising:

• determining a plurality of difference error counts (Diff-EC) that are indicative of relative widths of valleys, wherein each of the valleys is located between a respective pair of program distributions of memory cells of the memory device;
• and
• performing a program targeting operation on a memory cell of the memory device to calibrate one or more program verify (PV) targets associated with the programming distributions, wherein performing the program targeting operation comprises:
• selecting a rule from a predefined set of rules based on the plurality of difference error counts, wherein the predefined set of rules corresponds to an adjusting of a PV target of a last programming distribution;
• and
• adjusting, based on the selected rule, the one or more PV targets of a plurality of PV targets associated with the programming distributions, wherein the one or more PV targets correspond to one or more respective voltage values for programming memory cells of the memory device.