US 12,038,718 B2 · Holographic microscope and manufacturing method of semiconductor device using the same

Abstract

Provided is a holographic microscope including an input optical system configured to emit polarized input beam, a first beam splitter configured to emit an object beam by reflecting a portion of the polarized input beam, and emit a reference beam by transmitting a remaining portion of the polarized input beam, a reference optical system configured to separate the reference beam into a first reference beam and a second reference beam, a camera configured to receive the first reference beam and the second reference beam and the object beam that is reflected by an inspection object, the camera including a micro polarizer array, wherein a first polarization axis of the first reference beam is perpendicular to a second polarization axis of the second reference beam.

Claims20

Dependent claims

A manufacturing method of a semiconductor device, the manufacturing method comprising:

generating a first hologram image by interfering a first reference beam that is linearly polarized with an object beam that is reflected by a top surface of a wafer, and generating a second hologram image by interfering a second reference beam having a polarization direction substantially perpendicular to the first reference beam with the object beam;
generating the first hologram image in a wave number domain and the second hologram image in the wave number domain by applying Fourier transform to a first image and a second image, respectively;
and
generating a differential image in the wave number domain based on the first hologram image in the wave number domain and the second hologram image in the wave number domain,
wherein the first hologram image and the second hologram image are generated by a camera, and
wherein the first reference beam and the second reference beam are obliquely incident on the camera, and the object beam is perpendicularly incident on the camera.

3 more elements

A manufacturing method of a semiconductor device, the manufacturing method comprising:

coating a photoresist layer on a wafer;
removing a portion of the photoresist layer coated on a boundary of the wafer based on an edge bead removal operation;
and
evaluating the edge bead removal operation,
wherein the evaluating the edge bead removal operation comprises:
generating a first hologram image by interfering a first reference beam that is linearly polarized with an object beam that is reflected by an edge portion of the wafer, and generating a second hologram image by interfering a second reference beam having a polarization direction perpendicular to the first reference beam with the object beam;
generating the first hologram image in a wave number domain and the second hologram image in the wave number domain by applying Fourier transform to a first image and a second image, respectively;
and
generating a differential image in the wave number domain based on the first hologram image in the wave number domain and the second hologram image in the wave number domain,
wherein the first hologram image and the second hologram image are generated by a camera, and
wherein the first reference beam and the second reference beam are inclined at angles that are different from each other with respect to the camera, and the object beam is perpendicularly incident on the camera.

8 more elements

A manufacturing method of a semiconductor device, the manufacturing method comprising:

coating a photoresist layer on a wafer;
removing a portion of the photoresist layer coated on a boundary of the wafer based on an edge bead removal operation;
evaluating the edge bead removal operation;
and
performing laser cleaning on the photoresist layer based on the evaluation of edge bead removal operation,
wherein the evaluating the edge bead removal operation comprises:
generating a first hologram image by interfering a first reference beam that is linearly polarized with an object beam that is reflected by an edge portion of the wafer, and generating a second hologram image by interfering a second reference beam having a polarization direction perpendicular to the first reference beam with the object beam;
generating the first hologram image in a wave number domain and the second hologram image in the wave number domain by applying Fourier transform to a first image and a second image, respectively;
and
generating a differential image in the wave number domain based on the first hologram image in the wave number domain and the second hologram image in the wave number domain,
wherein the first hologram image and the second hologram image are generated by a camera, and
wherein a first polarization direction of the first reference beam is substantially perpendicular to a second polarization direction of the second reference beam.

9 more elements

Dependencies are inferred from the claim text.

Holographic microscope and manufacturing method of semiconductor device using the same

Life of this patent

Holographic microscope and manufacturing method of semiconductor device using the same

Life of this patent

Abstract

Claims20