Method for manufacturing decorative member, and decorative member
AssigneeLG Chem, Ltd.
InventorsPilsung Jo, Yong Chan Kim, Song Ho Jang, Ki Hwan Kim, Nansra Heo, Jeong Woo Shon
Life of this patent
Estimating the term…
Abstract
The present disclosure relates to a method for manufacturing a decoration element, the method including depositing a light reflective layer having a structure of two or more islands separated from each other on one surface of a light absorbing layer; and dry etching the light absorbing layer using the island as a mask, wherein a resistance value of the decoration element after the dry etching of the light absorbing layer increases by two times or more compared to before the dry etching of the light absorbing layer.
Claims9
A method for manufacturing a decoration element, the method comprising:
- depositing a light reflective layer having a structure of two or more islands separated from each other on one surface of a light absorbing layer;
- and
- dry etching the light absorbing layer using each of the two or more islands as a mask,
- wherein the depositing of the light reflective layer is conducted under a temperature condition of 10° C. to 100° C., without further heat treatment,
- wherein the dry etching is conducted for longer than or equal to 60 seconds and shorter than or equal to 300 seconds,
- wherein a resistance value of the decoration element after the dry etching of the light absorbing layer increases by two times or more compared to a resistance value of the decoration element before the dry etching of the light absorbing layer,
- wherein the mask is not removed after dry etching completed,
- wherein the light reflective layer consists of indium (In),
- wherein the depositing of the light reflective layer uses a sputtering method, and
- wherein, in the sputtering method:
- a shortest distance (d1) between the light absorbing layer and a sputter target is 200 mm or less, and electric power is applied for 10 seconds to 1,000 seconds under an electric power condition of 0.1 W/cm2 to 10 W/cm2 applied per a unit area of the sputter target;
- or
- a shortest distance (d2) between the light absorbing layer and a sputter target is greater than 200 mm, and electric power is applied for 10 seconds to 1,200 seconds under an electric power condition of 1 W/cm2 to 10 W/cm2 applied per a unit area of the sputter target.
Dependencies are inferred from the claim text.